GaN, Si, and SiC power switch characterization and PCB optimization
May 27, 2018
With GaN power semiconductors, new system innovations is now possible in diverse power-reliant industries. Reimagining the role of power in products and entire systems can impact both the immediate bottom line and long-term business competitiveness.
In order to flourish the features of GaN power switches, PCB optimization is required.
• Designed, developed and implemented direct and indirect characterization techniques for Si, SiC and GaN power switches, for faster product development and cost reduction
• Designed an optimized high speed PCB for GaN power switches, minimized stray inductance and parasitic capacitance, collaborated with a team of 4 engineers in the power electronics lab of UBC, resulted in a ringing reduction of 7%
• Instructed 3 master's students, who joined the project